Increasing number of applications to boost the overall growth by more than 7%

The main uses of silicon carbide power systems include automotive, power, aerospace & defense, consumer electronics, medical equipment, industrial sectors, and more.  Silicon carbide is a silicon and carbon crystalline compound and has some main qualities, e.g. high strength, low density and hardness. These factors mainly enhance the use of power devices based on silicon carbide in different industries. In addition, the silicon carbide-based products have some key features of high thermal conductivity and low thermal expansion.

In addition, thermal shock resistance of silicon carbide market make them prominent especially in consumer electronics applications. Increased demand for advanced material-based automotive, medical, industrial, power and defense components contributes to the worldwide positive development of silicone carbide power devices market. The increased use in military and defense sectors of silicon carbide power devices, together with the wind and solar power industries is considered as a key market driver.

SiC wafer to be the latest and emerging trend in the global industry

The market is going to witness a shift towards larger SiC wafers over the next few years. A six-inch wafer can help reduce the cost of producing a wide range of chips. The use of large wafers has been observed to reduce the manufacturing cost by 30% and the costs of equipment by 20%. Norstel has already designed 6 inch SiC n-type wafer for improved SiC Wafer quality. It is one of the leading manufacturers of leading and semi-insulating SiC substrate. Furthermore, STMicroelectronics has planned the construction of a SiC wafer for six inches to reduce SiC production costs.

In many end user industries, the increasing need for energy saving electronics drives the adoption of SiC power devices. These devices provide high support in automotive electronics controlling systems such as modern electric steering and HEV main inverter, seat control and braking systems. Moreover, power electronics helps to manage thermal problems and enhance fuel efficiency. In the aerospace and defense sectors, demand for power electronics is high because of its properties like lightweight, easy maintenance and use and fault detection intelligence availability. These advantages drive the need to use electronic devices in such systems, which in turn drives the market demand for silicon carbide energy devices.

Rising advantage of compound SiC over the conventional silicon technology

The features of silicon carbide semi-conductors, such as higher power fail-ups and broader band gaps, enable their use in electronics, such as electric power steering, electric hydro-electric vehicles main inverter, seat control, and the braking system, to play a very important role in controlling automotive electronics. SiC Power Electronics also allows energy transformation into aircraft-integrated generators and actuators.

Silicium carbide power semiconductors have superior electronic properties to those of silicone. They have higher saturated electron speeds and mobility of the electron. Because of their broader energy bandgap, SiC power semiconductors are relatively less damaged by overheating. They also tend to create less noise than silicon devices in electronic circuits, which reduces power loss. Such enhanced properties stimulate the increased use in satellite communication, mobile phone, microwave and high-frequency radar systems of compound semiconductors such as SiC power devices. This superiority between semiconductors for silicon carbide power over silicon therefore drives the market

Major players profiled in the global market report include Toshiba, NXP Semiconductors, Tokyo Electron Limited, Infineon Technologies AG, General Electric, Microsemi, Fairchild Semiconductor, STMicroelectronics and Power Integrations among others.